Chemical mechanical polishing apparatus

ABSTRACT

The present disclosure discloses a chemical mechanical polishing apparatus including a polishing machine platform, an electrode film, a polishing pad and a wafer carrier. The electrode film has a first single electrode structure and is disposed on the polishing machine platform. The polishing pad is disposed on the electrode film. The wafer carrier is disposed on the polishing machine platform. In particular, the first single electrode structure generates a first homopolar electric field on the polishing pad.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present disclosure relates to a chemical mechanical polishingapparatus; in particular, the invention relates to a chemical mechanicalpolishing apparatus using electrode film to generate an electric field.

2. Description of Related Art

A chemical mechanical polishing apparatus is widely used in flattening asemiconductor wafer. The chemical mechanical polishing apparatus mountsthe wafer on the polishing pad, and polishes and flattens the wafersurface by applying a slurry and exerting a force thereon.

Conventional slurries include abrasive powders, PH buffers,antioxidants, inhibitors, and various chemical surfactants. Thesechemical materials interact with the surface of the wafer and form aremovable oxide layer or passivation layer.

The PH buffers in conventional slurries adjust the electrical repulsiveforce between the abrasive powder particles by changing the level ofacidity and alkaline (i.e., the chargeability of slurry), thusmaintaining the stability of the suspension of the powder particles.However, the effect of the PH buffers is limited so that the efficiencyof polishing is decreased and that scratches and residual stressesremain on the surface of wafer.

Therefore, improving the polishing efficiency by modifying thestructural design of conventional chemical mechanical polishingapparatus is crucial in the field of semiconductor manufacturing.

SUMMARY OF THE INVENTION

The object of the present disclosure is to improve the polishingefficiency of conventional chemical mechanical polishing apparatus.

In order to achieve the aforementioned objects, according to anembodiment of the present disclosure, a chemical mechanical polishingapparatus includes a polishing machine platform, an electrode film, apolishing pad and a wafer carrier. The electrode film has a first singleelectrode structure and is disposed on the polishing machine platform.The polishing pad is disposed on the electrode film. The wafer carrieris disposed on the polishing machine platform. In particular, the firstsingle electrode structure generates a first homopolar electric field onthe polishing pad.

In order to achieve the aforementioned objects, according to anotherembodiment of the present disclosure, a chemical mechanical polishingapparatus includes a polishing machine platform, a polishing pad, awafer carrier and an electrode film. The polishing pad is disposed onthe electrode film. The wafer carrier is disposed on the polishingmachine platform and has a mounting surface for mounting a wafer. Theelectrode film has a first single electrode structure and is disposed onthe mounting surface of the wafer carrier. In particular, the firstsingle electrode structure generates a first homopolar electric field onthe polishing pad.

The advantage of the present disclosure includes:

The chemical mechanical polishing apparatus in the present disclosuregenerates an electric field between the wafer and the polishing pad bythe technical feature that “the first single electrode structuregenerates a first homopolar electric field on the polishing pad”. Thistechnical feature keeps the slurry (and the abrasive powder particles)in the polishing pad, and increases the probability of contact betweenthe wafer and the abrasive powder particles. Therefore, the overallpolishing efficiency is increased.

In order to further the understanding regarding the present disclosure,the following embodiments are provided along with illustrations tofacilitate the disclosure of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic 3-dimensional view of a chemical mechanicalpolishing apparatus according to a first embodiment of the presentdisclosure;

FIG. 2 shows a schematic diagram of a chemical mechanical polishingapparatus according to the first embodiment of the present disclosure;

FIG. 3 shows a schematic cross-sectional view taken along the planeIII-III in FIG. 2;

FIG. 4 shows another schematic cross-sectional view along the planeIII-III in FIG. 2;

FIG. 5 shows a schematic exploded view of a chemical mechanicalpolishing apparatus according to a second embodiment of the presentdisclosure;

FIG. 6 shows a schematic diagram of a chemical mechanical polishingapparatus according to the second embodiment of the present disclosure;

FIG. 7 shows a schematic cross-sectional view taken along the planeVII-VII in FIG. 6 when the first single electrode structure generates apositive electric field and the second electrode structure generates anegative electric field between the wafer and the polishing pad;

FIG. 8 shows a schematic cross-sectional view along the plane VII-VII inFIG. 6 when the first single electrode structure generates a negativeelectric field and the second electrode structure generates a positiveelectric field between the wafer and the polishing pad;

FIG. 9 shows a schematic diagram of a first embodiment of the firstsingle electrode structure;

FIG. 10 shows a schematic diagram of a second embodiment of the firstsingle electrode structure;

FIG. 11 shows a schematic diagram of a third embodiment of the firstsingle electrode structure;

FIG. 12 shows a schematic cross-sectional view taken along the planeXII-XII in FIG. 9;

FIG. 13 shows a schematic diagram of a fourth embodiment of the firstsingle electrode structure;

FIG. 14 shows a schematic lateral view of a fourth embodiment of thefirst single electrode structure;

FIG. 15 shows a schematic 3-dimensional view of a chemical mechanicalpolishing apparatus according to a third embodiment of the presentdisclosure;

FIG. 16 shows a schematic diagram of a first embodiment of an electricfield enhancement structure; and

FIGS. 17A to 17G are schematic diagrams of a conductor of the electricfield enhancement structure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The aforementioned illustrations and following detailed descriptions areexemplary for the purpose of further explaining the scope of the presentdisclosure. Other objectives and advantages related to the presentdisclosure will be illustrated in the subsequent descriptions andappended drawings.

It should be noted that the present embodiments use first, second, thirdand so forth to distinguish one element from another, but the presentdisclosure is not limited thereto. In addition, the term “or” in thepresent disclosure may include any listed items and any combinationsthereof, depending on the context

First Embodiment

FIG. 1 shows a schematic 3-dimensional view of a chemical mechanicalpolishing apparatus according to a first embodiment of the presentdisclosure. The chemical mechanical polishing apparatus Z in the presentembodiment includes a polishing machine platform 1, an electrode film 2,a polishing pad 3 and a wafer carrier 4. The electrode film 2 has afirst single electrode structure 21 and is disposed on the polishingmachine platform 1. The polishing pad 3 is disposed on the electrodefilm 2. The wafer carrier 4 is disposed on the polishing machineplatform 1. In particular, the first single electrode structure 21generates a first homopolar electric field on the polishing pad 3 afterreceiving an operating voltage.

In practice, a sprinkler head 5 of the chemical mechanical polishingapparatus Z continuously supplies slurry to the polishing pad 3. Thatis, the slurry is distributed in the space between the polishing pad 3and a wafer 6. Therefore, the first homopolar electric field (positiveor negative) is generated between the polishing pad 3 and the wafer 6when the first single electrode structure 21 of the electrode film 2 iselectrically coupled with a single electrode wire (positive electrodewire or negative electrode wire). The first homopolar electric fieldinteracts with the abrasive powder particles of the slurry and changesthe charge distribution of the abrasive powder particles, thusincreasing the uniformity of the polishing process.

The electrode film 2 in the first embodiment could be disposed on abottom surface 31 of the polishing pad 3. The electrode film 2 could bedisposed on a top surface 11 of the polishing machine platform 1 aswell. It is also possible that the electrode film 2 is disposed withinthe polishing machine platform 1. The present disclosure does not intendto limit the location of the electrode film 2, and a person havingordinary skill in the art may modify the location thereof to fitparticular needs. It should be noted that the electrode film 2 could becompletely attached to, partially attached to, or placed on the targetedsurface.

In addition, the electrode film 2 could also be disposed on a mountingsurface of the wafer carrier 4 so that the electrode film 2 generatesthe first homopolar electric field on the polishing pad 3. The electrodefilm 2 may also be disposed between the wafer carrier 4 and the wafer 6.

FIG. 2 shows a schematic diagram of a chemical mechanical polishingapparatus according to the first embodiment of the present disclosure.In operation, the sprinkler head 5 of the chemical mechanical polishingapparatus Z continuously supplies slurry to the polishing pad 3, whichthe wafer 6 directly contacts. At this time, the first single electrodestructure 21 receives an operating voltage and generates the firsthomopolar electric field to act on the abrasive powder particles.Therefore, the polishing pad 3 uniformly polishes the wafer 6 as thewafer carrier 4 spins.

FIG. 3 shows a schematic cross-sectional view taken along the III-planeIII in FIG. 2. As shown in FIG. 3, the first single electrode structure21 is electrically coupled with the positive electrode wire andgenerates a positive electric field when the slurry L is positivelycharged. In this case, the electrical repulsive force moves the abrasivepowder particles toward the wafer 6 so that a material remote rate (MRR)is increased. On the other hand, the first single electrode structure 21could be electrically coupled with the negative electrode wire andgenerate a negative electric field when the slurry L is positivelycharged. In this case, the electrical attractive force moves theabrasive powder particles toward the polishing pad 3 so that the wafer 6can be evenly flattened.

FIG. 4 shows another schematic cross-sectional view along the III-IIIplane in FIG. 2. As shown in FIG. 4, the first single electrodestructure 21 is electrically coupled with the negative electrode wireand generates a negative electric field when the slurry L is negativelycharged. In this case, the electrical repulsive force moves the abrasivepowder particles toward the wafer 6 so that a material remote rate (MRR)is increased. On the other hand, the first single electrode structure 21could be electrically coupled with the positive electrode wire andgenerate a positive electric field when the slurry L is negativelycharged. In this case, the electrical attractive force moves theabrasive powder particles toward the polishing pad 3 so that the wafer 6can be evenly flattened.

In the present embodiment, as the first single electrode structure 21 iselectrically coupled with one of the electrode wires (positive ornegative), the uncoupled electrode wire could connect to any position ofa power supply (not shown) or the polishing machine platform 1 (notshown), but the present disclosure is not limited thereto. For example,the uncoupled electrode wire could be disposed on the wafer carrier 4,as described in the following embodiment.

Second Embodiment

FIG. 5 shows a schematic exploded view of a chemical mechanicalpolishing apparatus according to a second embodiment of the presentdisclosure. The chemical mechanical polishing apparatus Z′ in thepresent embodiment includes a polishing machine platform 1′, a firstelectrode film 2′, a polishing pad 3′ and a wafer carrier 4′. Thechemical mechanical polishing apparatus Z′ in the present embodimentbasically has the same structure as the previous (first) embodiment, andthe first electrode film 2′ in the present embodiment is basically thesame as the electrode film 2 in the previous embodiment. The followingdescriptions focus on the differences between the present and previousembodiments.

Referring to FIG. 5, unlike the chemical mechanical polishing apparatusZ in FIG. 1, the present embodiment further includes a second electrodefilm 7′ disposed between the wafer carrier 4′ and a wafer 6′. That is,the second electrode film 7′ is disposed on a mounting surface 41′ ofthe wafer carrier 4′. Specifically, the second electrode film 7′includes a second electrode structure 71′ so that it can be disposed onthe mounting surface 41′ of the wafer carrier 4′. In addition, thestructure of the first electrode film 2′ and the second electrode film7′ could be the same or different. The following descriptions detail thestructure of the electrode films and related modifications.

The first single electrode structure 21′ could be electrically coupledwith a first single electrode wire (positive wire or negative wire) togenerate a first homopolar electric field on the polishing pad 3′, andthe second electrode structure 71′ could be electrically coupled with asecond single electrode wire (negative wire or positive wire) togenerate a second homopolar electric field on the polishing pad 3′. Itshould be noted that the first homopolar electric field has a polaritydifferent from the second homopolar electric field.

For example, the first single electrode structure 21′ of the firstelectrode film 2′ could be electrically coupled with a positive firstsingle electrode wire to generate a positive first homopolar electricfield, or could be electrically coupled with a negative first singleelectrode wire to generate a negative first homopolar electric field.Similarly, the second electrode structure 71′ of the second electrodefilm 7′ could be electrically coupled with a positive second electrodewire to generate a positive second homopolar electric field, or could beelectrically coupled with a negative second electrode wire to generate anegative second homopolar electric field. It is also possible that oneof the first single electrode structure 21′ and the second electrodestructure 71′ generates a homopolar electric field while the othergenerates no electric field. A person having ordinary skill in the artmay modify the setting of the first single electrode structure 21′ andthe second electrode structure 71′ to fit particular needs.

FIG. 6 shows a schematic diagram of a chemical mechanical polishingapparatus according to the second embodiment of the present disclosure.In practice, a sprinkler head 5′ of the chemical mechanical polishingapparatus Z′ continuously supplies slurry to the polishing pad 3′. Atthe same time, the first single electrode structure 21′ and the secondelectrode structure 71′ receive an operating voltage, and generate thefirst and second homopolar electric fields with different polarities toact on the abrasive powder particles of the slurry. Therefore, thepolishing pad 3′ uniformly polishes the wafer 6′ as the wafer carrier 4′spins.

FIG. 7 shows a schematic cross-sectional view taken along the planeVII-VII in FIG. 6 when the first single electrode structure 21′generates a positive homopolar electric field and the second electrodestructure 71′ generates a negative homopolar electric field between thewafer and the polishing pad. FIG. 8 shows a schematic cross-sectionalview taken along the plane VII-VII in FIG. 6 when the first singleelectrode structure 21′ generates a negative electric field and thesecond electrode structure 71′ generates a positive electric fieldbetween the wafer and the polishing pad. Referring to FIG. 7, the firstsingle electrode structure 21′ generates a positive electric fieldbetween the polishing pad 3′ and the wafer 6′ when being electricallycoupled with the positive electrode wire, and the second electrodestructure 71′ generates a negative electric field between the polishingpad 3′ and the wafer 6′ when being electrically coupled with thenegative electrode wire. Referring to FIG. 8, the first single electrodestructure 21′ generates a negative electric field between the polishingpad 3′ and the wafer 6′ when being electrically coupled with thenegative electrode wire, and the second electrode structure 71′generates a positive electric field between the polishing pad 3′ and thewafer 6′ when being electrically coupled with the positive electrodewire.

Specifically, the electric fields with opposite polarities generated bythe first single electrode structures 21′ and the second electrodestructure 71′ change the charge distribution of the abrasive powderparticles, and thus affect the efficiency of polishing. Referring toFIG. 7, for example, the abrasive powder particles are repelled by thepositive electric field generated by the first single electrodestructure 21′ and attracted by the negative electric field generated bythe second electrode structure 71′. Referring to FIG. 8, on the otherhand, the abrasive powder particles are attracted by the negativeelectric field generated by the first single electrode structure 21′ andrepelled by the positive electric field generated by the secondelectrode structure 71′.

It should be noted that the first single electrode structure 21′ and thesecond electrode structure 71′ in the present embodiment generateelectric fields with opposite polarities to act on the abrasive powderparticles concurrently. In other embodiments of the present disclosure,it is possible to generate only one electric field according to thepolarity of the abrasive powder particles. For example, the first singleelectrode structure 21′ generates a positive (or negative) electricfield, and the second electrode structure 71′ generates no electricfield, and vice versa. A person having ordinary skill in the art couldalter the electric fields generated by the first electrode film 2′ andthe second electrode film 7′ to fit particular needs.

FIG. 9 shows a schematic diagram of a first embodiment of the firstsingle electrode structure. FIG. 10 shows a schematic diagram of asecond embodiment of the first single electrode structure. The electrodefilm 2 could be circular, and cover smoothly and completely on thepolishing machine platform. The first single electrode structure 21 isformed by a coplanar metal conductor. The first single electrodestructure 21 could include a plurality of metal wires that are coplanarand separated from each other.

Referring to FIG. 9, the first single electrode structure 21 a is aplanar swirl metal wire having a constant distance between neighboringarcs, thereby providing a stable electric field. Referring to FIG. 10,the first single electrode structure 21 b is a planar labyrinth-likemetal wire, which includes a plurality of flat portions 211 b and bentportions 212 b. The plurality of flat portions 211 b have a constantinterval therebetween, thereby providing a stable electric field. Inaddition, the plurality of bent portions 212 b could be rectangular,semi-circular, arc-shaped, and so forth.

FIG. 11 shows a schematic diagram of a third embodiment of the firstsingle electrode structure. The first single electrode structure 21 c isa flat metal layer formed by processes including CVD, PVD, coating andprinting. The flat metal layer could be composed of single metal, or becomposed of multiple metals selected from copper, silver, nickel,titanium, titanium nitride, tantalum, tantalum nitride, aluminum,tungsten, tungsten nitride, silicon tungsten, titanium silicon nitride,silicon nitride, tantalum. The flat metal layer could include a singlelayer, or multiple layers. However, the material and structure of thefirst single electrode structure 21 c are not limited to that disclosedin the exemplary embodiments.

Further referring to FIG. 5, the first electrode film 2′ and the secondelectrode film 7′ in the second embodiment could have the samestructure, or different structures. For example, both the first singleelectrode structure 21′ and the second electrode structure 71′ couldinclude a plurality of metal wires. It is also possible that the firstsingle electrode structure 21′ includes a plurality of metal wires andthe second electrode structure 71′ is a flat metal layer. A personhaving ordinary skill in the art may modify the design of the firstsingle electrode structure 21′ and the second electrode structure 71′ tofit particular needs as long as two electrode structures together couldgenerate an electric field.

FIG. 12 shows a schematic cross-sectional view taken along the planeXII-XII in FIG. 9. The electrode film 2 includes a first singleelectrode structure 21, a base layer 22 and a protective layer 23.Specifically, the first single electrode structure 21 is disposed on thebase layer 22 and covered by the protective layer 23. The first singleelectrode structure 21 is protected by the protective layer 23 fromdamage when being attached to the polishing pad 3. In addition, theprotective layer 23 could be a non-conductive glue attached to thebottom surface of the polishing pad so that the electrode film 2 couldattach to the polishing pad 3 without additional adhesive. It should benoted that the protective layer 23 could be selected from substratesingle-sided adhesive, substrate-free single-sided adhesive, substratedouble-sided adhesive, substrate-free double-sided adhesive,light-curing adhesive, heat-curing adhesive, light curing adhesive orlight-heat curing adhesive. The light curing adhesive could be anacrylic-based UV-curable adhesive gel, and the heat-curing adhesivecould be an epoxy resin, polyimide resin or silicon resin. However, thematerial of the protective layer 23 in the present disclosure is notlimited thereto.

A person having ordinary skill in the art should understand that theaforementioned types of chemical mechanical polishing apparatus areexemplary embodiments, and could be modified to fit particular needs.

For example, referring to FIG. 13, which shows a schematic diagram of afourth embodiment of the first single electrode structure 21. The firstsingle electrode structure 21 d includes a first single electrode wire(positive wire or negative wire), which further includes a firstelectrode wire 211 d and a second electrode wire 212 d staggered to eachother. Referring to FIG. 14, which shows a schematic lateral view of afourth embodiment of the first single electrode structure 21. The heightof the first electrode wire 211 d relative to the base layer 22 isdifferent from the height of the second electrode 212 d wire relative tothe base layer 22. That is, the first electrode wire 211 d could behigher than the second electrode wire 212 d in its entirety, or thefirst electrode wire 211 d could be partially higher than the secondelectrode wire 212 d. A person having ordinary skill in the art maymodify the height of the first electrode wire 211 d and the secondelectrode wire 212 d to fit particular needs as long as the two wiresare staggered to each other.

In other embodiments of the present disclosure, the chemical mechanicalpolishing apparatus could further include an electric field enhancementstructure to enhance the electric field generated on the electric film.The following embodiment describes the electric field enhancementstructure in detail. In addition, the electric field enhancementstructure could be disposed between the electrode film and the waferwhen the electrode film is set between the wafer carrier and the wafer.That is, the electric field enhancement structure aims to help theelectrode film increase the strength of the electric field.

Third Exemplary Embodiment

Referring to FIG. 15, which shows a schematic 3-dimensional view of achemical mechanical polishing apparatus according to a third embodimentof the present disclosure. The chemical mechanical polishing apparatusZ″ includes a polishing machine platform 1″, a first electrode film 2″,a polishing pad 3″ and a wafer carrier 4″. The chemical mechanicalpolishing apparatus Z″ in the present embodiment basically has the samestructure as the first embodiment, and the first electrode film 2″ inthe present embodiment is basically the same as the electrode film 2 inthe previous embodiment. The following descriptions focus on thedifferences between the present and previous embodiments.

Referring further to FIG. 15, the difference between the chemicalmechanical polishing apparatus Z″ in the present embodiment and previousembodiments resides in the electric field enhancement structure 8″,which is disposed on the first electrode film 2″. Specifically, theelectric field enhancement structure 8″ is disposed between the firstelectrode film 2″ and the polishing pad 3″, and includes a plurality ofconductors 81″ that are adjacent to each other. The plurality ofconductors 81″ could be a floating wire structure. In addition, theplurality of conductors 81″ could have the same structure, or havedifferent structures.

Referring to FIGS. 17A to 17G, which are schematic diagrams of aconductor of the electric field enhancement structure. The plurality ofconductors 81″ could have different structures, such as having twoopposite ends separated from each other. That is, each of the pluralityof conductors 81″ has two opposite ends separated from each other, whichform an opening. Referring to FIG. 17A, the plurality of conductors 81″are U-shaped. Referring to FIG. 17B, the plurality of conductors 81″ areC-shaped. Referring to FIG. 17C, the plurality of conductors 81″ arerectangular with an opening at one side. Referring to 17D, four L-shapedconductors 81″ form a near-rectangular shape having multiple openings.Referring to Figs. E to F, multiple conductors 81″ form a group, andeach conductor 81″ has two opposite ends separated from each other.Referring to FIG. 17E, the conductors 81″ are cylindrical. Referring toFIG. 17F, the conductors 81″ are square columnar. Referring to 17G, theconductors 81″ are conical.

Effects of Exemplary Embodiments

The chemical mechanical polishing apparatus in the present disclosuregenerates a single electric field between the wafer and the polishingpad by the technical feature that “the first single electrode structuregenerates a first homopolar electric field on the polishing pad”. Thistechnical feature keeps the slurry (and the abrasive powder particles)in the polishing pad, or increases the probability of contact betweenthe wafer and the abrasive powder particles. Therefore, the overallpolishing efficiency is increased.

The descriptions illustrated supra set forth simply the preferredembodiments of the present disclosure; however, the characteristics ofthe present disclosure are by no means restricted thereto. All changes,alterations, or modifications conveniently considered by those skilledin the art are deemed to be encompassed within the scope of the presentdisclosure delineated by the following claims.

What is claimed is:
 1. A chemical mechanical polishing apparatus,comprising: a polishing machine platform; an electrode film having afirst single electrode structure and being disposed on the polishingmachine platform; a polishing pad disposed on the electrode film; and awafer carrier disposed on the polishing machine platform; wherein thefirst single electrode structure generates a first homopolar electricfield on the polishing pad.
 2. The chemical mechanical polishingapparatus according to claim 1, further comprising a second electrodestructure disposed on the polishing pad, the location of the secondelectrode structure corresponding to the location of the electrode film.3. The chemical mechanical polishing apparatus according to claim 2,wherein the wafer carrier has a mounting surface for mounting a wafer,and a second electrode structure is disposed on the mounting surface. 4.The chemical mechanical polishing apparatus according to claim 2,wherein the second electrode structure generates a second homopolarelectric field on the polishing pad; wherein the first homopolarelectric field has a polarity different from the second homopolarelectric field.
 5. The chemical mechanical polishing apparatus accordingto claim 1, wherein the electrode film is disposed on a bottom surfaceof the polishing pad.
 6. The chemical mechanical polishing apparatusaccording to claim 1, wherein the electrode film is disposed on the topsurface of the polishing machine platform.
 7. The chemical mechanicalpolishing apparatus according to claim 1, wherein the electrode film isdisposed within the polishing machine platform.
 8. The chemicalmechanical polishing apparatus according to claim 1, wherein theelectrode film further includes a base layer and a protective layer, thefirst single electrode structure being disposed on the base layer andbeing covered by the protective layer.
 9. The chemical mechanicalpolishing apparatus according to claim 8, wherein the protective layeris a nonconductive glue attached to the bottom surface of the polishingpad.
 10. The chemical mechanical polishing apparatus according to claim8, wherein the first single electrode structure includes a firstelectrode wire and a second electrode wire staggered to each other, theheight of the first electrode wire relative to the base layer beingdifferent from the height of the second electrode wire relative to thebase layer.
 11. The chemical mechanical polishing apparatus according toclaim 1, wherein the first single electrode structure is a flat metallayer.
 12. The chemical mechanical polishing apparatus according toclaim 1, wherein the first single electrode structure includes aplurality of metal wires that are coplanar and separated from eachother.
 13. The chemical mechanical polishing apparatus according toclaim 1, wherein the electrode film is circular and covers smoothly andcompletely on the polishing machine platform, and the first singleelectrode structure is formed by a coplanar metal conductor.
 14. Thechemical mechanical polishing apparatus according to claim 1, furtherincluding an electric field enhancement structure being disposed on theelectrode film and having a plurality of conductors that are adjacent toeach other.
 15. The chemical mechanical polishing apparatus according toclaim 14, wherein each of the plurality of conductors has two oppositeends separated from each other.
 16. A chemical mechanical polishingapparatus, comprising: a polishing machine platform; a polishing paddisposed on the electrode film; a wafer carrier disposed on thepolishing machine platform and having a mounting surface for mounting awafer; and an electrode film having a first single electrode structureand being disposed on the mounting surface of the wafer carrier; whereinthe first single electrode structure generates a first homopolarelectric field on the polishing pad.
 17. The chemical mechanicalpolishing apparatus according to claim 16, further including an electricfield enhancement structure being disposed under the electrode film andhaving a plurality of conductors that are adjacent to each other.